NE3517S03-T1C-A – RF MOSFET Designed for High-Efficiency Circuits

The NE3517S03-T1C-A is a top-tier RF MOSFET from Renesas Electronics America Inc., designed for use in high-efficiency circuits that require low noise, excellent thermal performance, and a broad range of drain-source voltages. This transistor is ideal for engineers and technical buyers working on cutting-edge RF power amplifiers, mobile repeater networks, and 5G edge nodes. Below, we explore the features and advantages of the NE3517S03-T1C-A and how it can benefit your next project.

Where to Find NE3517S03-T1C-A?

We stock the genuine Renesas Electronics America Inc. NE3517S03-T1C-A MOSFETs, though we’re not official partners. All units are original and meet factory-grade specifications. Whether you need a single unit or bulk orders, we can provide you with the components you need in a timely manner to meet your project deadlines.

Pricing Notes

Pricing for the NE3517S03-T1C-A MOSFET is based on your specific project requirements and the quantity needed. To ensure you receive the most accurate and competitive pricing, we recommend filling out the provided form. Once your project details are received, we will send you a personalized offer that best suits your needs.

ICHOME for Technical Buyers

At ICHOME, we understand the needs of technical buyers and engineers. To ensure a smooth and hassle-free experience, we provide the following services:

• BOM Analysis Support: We offer detailed support in analyzing your Bill of Materials (BOM) to ensure compatibility and help optimize your design.
• Component Traceability: Gain full traceability for each component you source, ensuring authenticity and reliability.
• Project-Specific Sourcing: We tailor our sourcing to fit the specific requirements of your project, guaranteeing fast, cost-effective solutions.

Feature Highlights

The NE3517S03-T1C-A stands out in the RF MOSFET market due to its exceptional features:

• Low Noise: Designed for low-noise applications, this MOSFET helps in maintaining high signal integrity in your RF circuits.
• Excellent Thermal Resistance: With its robust thermal management properties, this device ensures minimal heat build-up, enhancing overall performance and longevity in demanding applications.
• Wide Drain-Source Voltage Range: The NE3517S03-T1C-A supports a wide range of operating conditions, providing versatility for various high-frequency designs.

What It’s Built For

The NE3517S03-T1C-A is designed for high-performance applications that demand superior power handling and reliability:

• RF Power Amplifiers: Perfect for amplifying signals in high-frequency communications systems.
• Mobile Repeater Networks: Optimized for use in mobile communication repeaters, enhancing signal strength over large areas.
• 5G Edge Nodes: A crucial component for 5G infrastructure, where high efficiency and low noise are essential to ensure seamless data transmission and connectivity.

Competitive Edge

When compared to alternatives from leading industry players like ON Semiconductor, the NE3517S03-T1C-A offers a competitive edge in terms of:

• Lower Capacitance: The NE3517S03-T1C-A maintains lower capacitance, which helps in achieving higher performance in high-frequency circuits.
• Better Vgs Linearity: This MOSFET offers better Vgs (Gate-Source Voltage) linearity, making it a more stable and reliable choice in high-power RF applications.

Need Components Fast?

At ICHOME, we understand that engineers and designers often face tight timelines. That’s why we are committed to fast and efficient component delivery. If you need the NE3517S03-T1C-A MOSFET or any other electronic components urgently, fill out our contact form today. Our team is ready to assist and ensure timely delivery so you can keep your project on track.

Feel free to reach out with any questions or for further support in sourcing the NE3517S03-T1C-A or other components tailored to your specific needs. We are here to help make your design process seamless and efficient.

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