NE3511S02-T1C-A – RF MOSFET Designed for High-Efficiency Circuits

The NE3511S02-T1C-A from Renesas Electronics America Inc. is a high-performance RF MOSFET designed specifically to meet the demanding requirements of modern high-frequency circuits. With its outstanding features and reliability, this component is an ideal choice for applications that require low noise, excellent thermal management, and superior efficiency.

Where to Find NE3511S02-T1C-A?

If you’re looking to purchase the NE3511S02-T1C-A MOSFET, you’re in the right place. We stock genuine, factory-grade units of this component, directly from Renesas Electronics America Inc. While we’re not official partners, rest assured that all units we offer are original and meet strict quality standards, ensuring your projects are built with the best parts available.

Pricing Notes

At our store, pricing is flexible and tailored to your specific project needs. We understand that each project has its unique requirements, and we offer customized quotes based on factors such as your quantity and specifications. For an accurate quote, simply fill in the form, and our team will get back to you with a competitive offer.

ICHOME for Technical Buyers

As a trusted supplier to engineers and technical buyers, we provide comprehensive support and services to make your procurement process as seamless as possible.

• BOM Analysis Support: We can help analyze your Bill of Materials (BOM) to ensure you’re selecting the right components for your design.
• Component Traceability: Our components come with full traceability, giving you confidence in their origin and authenticity.
• Project-Specific Sourcing: If you need specific parts for a unique project, our team can assist in sourcing components that meet your exact requirements.

Feature Highlights

The NE3511S02-T1C-A stands out with its top-tier features, including:

• Low Noise: Ideal for applications that require minimal interference and distortion, ensuring high-quality performance.
• Excellent Thermal Resistance: With superior heat management, this MOSFET ensures consistent performance in high-power environments, preventing overheating and failure.
• Wide Drain-Source Voltage Range: Offering flexibility in circuit design, the wide voltage range ensures compatibility with various high-frequency applications.

What It’s Built For

This versatile RF MOSFET is designed for use in a wide array of applications, including:

• RF Power Amplifiers: Essential in communication systems requiring efficient power conversion.
• Mobile Repeater Networks: Optimized for use in boosting signal strength and coverage in mobile communication.
• 5G Edge Nodes: With the growing demand for 5G networks, the NE3511S02-T1C-A is the perfect solution for high-frequency, low-latency communications at the network’s edge.

Competitive Edge

In comparison to alternatives from manufacturers such as ON Semiconductor, the NE3511S02-T1C-A offers significant advantages. This device maintains lower capacitance, which leads to improved high-frequency performance and better efficiency. Additionally, the Vgs linearity of the NE3511S02-T1C-A is superior, offering better control and stability across various operating conditions, giving it a distinct edge in demanding RF applications.

Need Components Fast?

If you need the NE3511S02-T1C-A or any other components quickly, we’re here to help. Fill out our contact form, and our dedicated team will assist you promptly. Engineers trust us for fast, reliable delivery, so you can keep your projects on track and meet tight deadlines.

By selecting the NE3511S02-T1C-A for your next project, you ensure that your designs are powered by a high-quality, reliable RF MOSFET that performs exceptionally well in even the most demanding high-frequency applications.

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